For the past 2+ years everyone has been enjoying my Power Semiconductors Weekly market updates and the other material related to power semiconductors and electronics industry. This is why,
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Besides the standard design, solder bond, and other already covered in my blog power semiconductor modules, there exist many types of the specific power semiconductor devices. Modules with
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In the previous article the question of Disadvantages of Power Semiconductor Modules with Standard Design was raised. Today we continue to investigate this matter. Influence of the
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The main disadvantages or problems of the power semiconductor modules with standard design can be divided into: cycling resistance due to the large difference in coefficients of the linear
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Solder bond power semiconductor modules cover a voltage range from 55V to 6500V with current from 1A to 3600A. There are almost all known topologies, such as half-bridges, sixpacks, and even CIB
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IGBT modules are widely used in power electronics industry. The range of IGBT modules produced today is very large. Many power semiconductor companies produce IGBT modules that are almost identical
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Date of Foundation: 2019Country: ChinaRevenue:CEO: Gavin LiangProducts: Power Semiconductors, SiC Power ModulesWebsite: www.leapers-power.com Company Overview Leapers
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Power semiconductor devices can be divided into several types by their design. They can be assembled as a stud, capsule, or module. Recently, solutions integrating the power semiconductor device,
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One of the most pressing problems, without solving which it is impossible to produce reliable high-voltage power semiconductor devices such as IGBTs, MOS Controlled Thyristors, etc., is the creation
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The main purpose of modification of IGBT deep semiconductor layers is the same as that of other types of bipolar power semiconductor devices. It is to obtain an optimal combination of the voltage
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