Power Semiconductors Weekly Vol. 75
Along with the rapid growth of the battery electric vehicles across the world, hydrogen-powered fuel-cell electric vehicles are on the same path to decarbonize many modes of modern transportation. Since the energy system becomes more reliant on renewables, hydrogen will play a very important role in the generation and storage of green power.
Through its technological innovations for automotive, IT, and renewable energy applications Leapers Semiconductor Co., Ltd. (Leapers Semiconductor) aims to move humanity forward to the better and greener future. Leapers Semiconductor strives to provide the most reliable solutions for power electronics engineers across the spectrum of industries and applications. That is why Leapers Semiconductor introduced to the market its latest F0 series Hybrid power modules.
F0 series are 1200 V hybrid power modules with press-fit terminals which integrate high performance IGBT chips and SiC diodes. F0 series Hybrid power modules are specifically designed for:
- Solar Inverters
- Fuel-Cell DC/DC Converters
- Energy Storage Systems
To produce highly reliable F0 series Hybrid power modules Leapers Semiconductor uses latest generation IGBT chips and silicon carbide diodes produced in Japan. Besides F0 hybrid modules feature Si3N4 AMB substrates which combine best mechanical robustness with excellent heat dissipation properties featuring very high-power densities.
Among other features F0 series Hybrid power modules offer:
- Blocking voltage 1200 V
- Very low saturation voltage VCE (sat)
- SiC diode
- 1600 V bypass and anti-parallel diodes
- Low inductive design
- Low thermal resistance
- Thermistor inside
- 175°C maximum junction temperature
At the moment Leapers Semiconductor offers F0 series Hybrid power modules as a 50A Dual Boost with blocking voltage of 1200V.
Leapers Semiconductor’s SiC, IGBT and Hybrid modules portfolio including F0 series responds to all requirements set by the automotive and renewable energy applications, and together with its partners Leapers Semiconductor will contribute to reach the targets set to face the global challenges including green energy generation, storage and transmission.
Magnachip Semiconductor Corporation (“Magnachip”) announced that the company has unveiled a new 650V insulated-gate bipolar transistor (IGBT) for solar inverters.
As environmental impacts from climate change are becoming more severe, the use of renewable energy like solar power continues to expand globally to reduce carbon emissions. Omdia, a global market research firm, estimates that the global market for IGBTs in the renewable energy sector will grow 15% annually from 2022 to 2025. In March 2022, Magnachip developed a new 650V IGBT built with advanced “field stop trench technology” for fast switching speed and high breakdown voltages and the company will begin mass production of it this month.
The current density of this new 650V IGBT was improved by 30% compared to the prior generation by adopting the latest technology. This IGBT is also designed to provide a minimum short-circuit withstand time of 5µs and it is optimized for parallel switching because of its positive temperature coefficient. The parallel switching of this IGBT will increase the load current and thus the maximum output power.
In addition, the 650V IGBT features anti-parallel diodes for fast switching and low switching loss, while guaranteeing a maximum operating junction temperature of 175°C. Based on standards issued by the Joint Electron Device Engineering Council (JEDEC), this new IGBT can be widely used for applications requiring strict power level and high efficiency, such as solar boost inverters and converters, uninterruptible power supplies and universal power inverters.
“Magnachip’s first IGBT was introduced in 2013, and since then, we have been committed to developing high-efficiency products for a variety of markets, while strengthening our presence around the world,” said YJ Kim, CEO of Magnachip. “With this new product, we are expanding our efforts to deliver high-performance products for the eco-friendly renewable energy market.”
PANJIT introduces two new bridge rectifiers, GBU-2 and KBJ-2, with 4A to 35A, 1000V standard type diode rectifiers. This new package has the latest structure with excellent heat dissipation due to its thermal design. It has optimal bridge diodes for applications which require large current and high-power operation.
New bridge rectifiers feature:
- AEC-Q101C qualified
- UL certificated E526209
- Lead free in compliance EU RoHS 2.0
- Halogen-Free according to IEC61249
TYSiC, a developer and manufacturer of silicon carbide (SiC) epitaxial wafers, made registration changes with the China’s Industrial and Commercial Administration, adding BYD as a new shareholder. The company’s registered capital increased to about 100 million yuan, an increase of 2.58%. Previously, Shenzhen Hubble Technology Investment Partnership, an affiliated company of Huawei, also invested in the company.
TYSiC was established in January 2009, and its legal representative is Li Xiguang. Its business scope includes the R&D, production and sales of silicon carbide epitaxial wafers, semiconductor materials, and related devices. It has introduced three world-class SiC-CVD and supporting test equipment. According to TYSiC’s official website, it established the Silicon Carbide Research Institute in 2010 in cooperation with the Institute of Semiconductors and the Chinese Academy of Sciences.
According to Zhihuiya, TYSiC’s recent focus has been on silicon carbide, quartz tubes, epitaxial wafers, semiconductors and other technical fields. It has 52 published patent applications, 51.92% of which are invention patents, and other patents with high market value include “a chemical-mechanical cleaning method for SiC epitaxial wafers”.
For years, BYD has been making direct investments around the upstream and downstream of the industrial chain. According to Tianyancha, BYD invested in more than 60 companies over the years, including BYD Auto Co., Ltd., Shenzhen BYD Lithium Battery Co., Ltd., FinDreams Industry Co., Ltd., and many others.
By direct or indirect shareholding, BYD is in effective control of nearly 900 enterprises, covering automobiles, lithium materials, rail transportation, display technology, construction engineering, property management and others. Among them, the projects with larger investment amounts are focused on BYD’s main strengths in the field of semiconductors and new energy. The company has also achieved a large shareholding or holding in some enterprises.
It is worth mentioning that BYD has also hatched unicorn enterprises that are involved with semiconductors, lithium batteries and precision manufacturing from its own business. At present, BYD Semiconductor is about to IPO.
Innoscience, a company founded to make the global energy ecosystem greener and more sustainable using high-performance, low-cost gallium-nitride-on-silicon (GaN-on-Si) power solutions, has expanded its European office with a new R&D center in Leuven, Belgium. The new GaN power device R&D activity in Belgium is headed by Dr. Jan Šonský who joined Innoscience as Vice President of R&D. Dr. Jan Šonský will lead the development of next generation technologies in close collaboration with the company’s R&D team in Innoscience’s headquarters.
Dr. Šonský received his Doctor’s Degree from Delft University of Technology in The Netherlands and has 20 years of experience in R&D in the semiconductor industry. Previously he has contributed and driven both GaN and Silicon technology developments for mobile and automotive applications for another leading semiconductor company, achieving technological breakthroughs. Dr. Šonský is widely respected across the industry. He served as General Chair of ISPSD conference and, as proof of his achievements, was elected to the ISPSD Hall of Fame in 2021.
Innoscience’s new R&D activity is situated in Leuven, nearby IMEC, a highly recognized center of excellence for advance semiconductor technology, and KU Leuven, well known for its activities in power electronics. Thus the new R&D team of Innoscience becomes the latest addition to the so-called ‘GaN Valley’ of Belgium.
The company aims to attract the best talent to execute its ambitious technology roadmap and become the undisputed leader in GaN power solutions. The newly established R&D center in Europe will play an important role in improving Innoscience’s core GaN device technology and products both in terms of performance and reliability, helping the company remain at the forefront of future GaN-based technology innovation.
Dr Denis Marcon, General Manager of Innoscience Europe, said: “We welcome Jan to Innoscience, and we are looking forward to benefitting from the work he and his team will do. Our devices are already delivering excellent performance at both low voltages (30V to 150V) and high voltage (650V) ratings. We expect the new R&D centre to deliver even better performance, smaller size and ultra-reliability.”
“Innoscience is 100% committed to gallium nitride” added Dr. Šonský. “I see a wonderful opportunity to drive our next-generation technology, enabling power electronics designers globally and across different markets to enjoy the high performance that InnoGaN brings, and revolutionize power applications as a result.”
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